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2027 Summer Ion Source Development Intern at Applied Materials - ApplyBlast

2027 Summer Ion Source Development Intern

Applied Materials

15 days ago

3.9 on Glassdoor

Gloucester, Massachusetts, United States

Onsite

Internship

Intern

0 applicants

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About this role

The 2027 Summer Ion Source Development Intern role at Applied Materials in Gloucester, MA, supports the Ion Source Development Group in creating new technologies and exploring materials to enhance ion source performance for semiconductor tools. The intern will assist in training, developing test plans, conducting experiments, analyzing data, and presenting findings to the team. This full-time internship runs from May 24 to August 13, 2027, and offers a supportive environment for career growth and professional development.

Responsibilities

Develop test plans to explore source performance and run experiments on test stands
Perform data acquisition and analysis from ion source experiments
Conceptually design new parts to improve ion source performance and stability

Skills

Qualifications

Bachelor's degree in Materials Science & EngineeringBachelor's degree in PhysicsBachelor's degree in a related field

About Applied Materials

appliedmaterials.com

Headquarters

Santa Clara, California, United States

Company Size

10001+ employees

Founded

1967

View Profile

Applied Materials is a global leader in materials engineering solutions that enable the production of virtually every new semiconductor chip and advanced display. The company designs, manufactures and services equipment, software and process technologies across semiconductor fabrication (deposition, etch, implantation, inspection/metrology, CMP, ALD/CVD/PVD), advanced packaging and display manufacturing. Its customers include chipmakers, foundries and display manufacturers worldwide, and it provides process integration, factory automation and lifecycle services to improve yield, performance and cost. Headquartered in Santa Clara, California, Applied Materials combines deep R&D and scale to drive device scaling, energy efficiency and new architectures.