Fab 9 Technology Development GaN Epitaxial Engineer
GlobalFoundries(8 months ago)
About this role
GlobalFoundries is hiring a Lead Epitaxy Development Engineer for the Fab9 Technology Development team in Essex Junction, Vermont. The role focuses on advancing differentiated semiconductor technology offerings by developing and qualifying GaN epitaxy processes for 200mm manufacturing. The position includes a leadership component, providing guidance and strategic project reviews across technology teams.
Required Skills
- Epitaxy
- MOCVD
- GaN
- III-V Growth
- Process Development
- Wafer Processing
- Process Optimization
- Device Physics
- TCAD
- Failure Analysis
+11 more
Qualifications
- MS in Electrical Engineering
- MS in Microelectronics
- MS in Materials Science
- MS in Solid State Physics
- PhD in Electrical Engineering
- PhD in Microelectronics
- PhD in Materials Science
- PhD in Solid State Physics
About GlobalFoundries
gf.comGlobalFoundries is a leading semiconductor manufacturing firm that specializes in providing advanced technology solutions to a global clientele. The company facilitates seamless collaboration through its GF Connect platform, allowing customers to manage orders and get to production more efficiently. With a commitment to innovation and quality, GlobalFoundries plays a crucial role in the semiconductor supply chain, delivering cutting-edge manufacturing capabilities for various industries.
View more jobs at GlobalFoundries →Apply instantly with AI
Let ApplyBlast auto-apply to jobs like this for you. Save hours on applications and land your dream job faster.
More jobs at GlobalFoundries
Similar Jobs
Epitaxy Process Engineer
Lumentum Japan, Inc.(1 month ago)
Epitaxy Engineer
NATIONAL(2 months ago)
Research Associate
McGill University(20 days ago)
Epitaxy Process Engineer
Lumentum Japan, Inc.(2 months ago)
Postdoctoral Appointee - Epitaxial Oxide Nanostructures for Quantum Information
UChicago Argonne(4 months ago)
Postdoctoral researcher or Research Fellow position in ultrawide bandgap (UWBG) power devices with MOVPE grown AlN/AlGaN
Aalto University(17 days ago)