Memory Core Design Engineering Intern

This high-autonomy internship offers a graduate student the opportunity to work directly with engineers and scientists on building world-class floating gate memory technology with immediate impact on AI infrastructure. The role involves designing innovative analog, semi-custom, and mixed-signal circuits for 3DNAND flash memory cores while collaborating with cross-functional teams to enhance power, performance, area, and reliability. Interns will drive the architecture, design, and physical implementation of memory core circuits, including cell arrays, sense amplifiers, and drivers.