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PhD for R&D CMOS Integration at GlobalFoundries - ApplyBlast

PhD for R&D CMOS Integration

GlobalFoundries

3 months ago

3.5 on Glassdoor

Dresden, Saxony, Germany

Onsite

Full Time

Senior

0 applicants

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About this role

This role involves conducting advanced research on the development and optimization of ferroelectric HfO₂-based devices for next-generation memory and AI applications. The candidate will focus on device-level physics analysis, integration schemes into advanced CMOS technologies, and structural/electrical characterization using tools like TEM, STEM, and SEM. The position offers direct supervision within the Technology Architect group and access to state-of-the-art semiconductor fabrication infrastructure.

Responsibilities

Optimize HfO₂ thin films for stable ferroelectric behavior
Conduct device-level physics analysis of embedded devices
Explore integration schemes into advanced FDSOI and bulk CMOS
Perform structural and electrical analysis using TEM and SEM
Map electrical characterization results to structural data

Skills

Qualifications

PhD in Materials SciencePhD in PhysicsPhD in Electrical Engineering

About GlobalFoundries

gf.com

Headquarters

Malta, New York, United States

Company Size

10001+ employees

Founded

2009

View Profile

GlobalFoundries is a leading semiconductor manufacturing firm that specializes in providing advanced technology solutions to a global clientele. The company facilitates seamless collaboration through its GF Connect platform, allowing customers to manage orders and get to production more efficiently. With a commitment to innovation and quality, GlobalFoundries plays a crucial role in the semiconductor supply chain, delivering cutting-edge manufacturing capabilities for various industries.