Principal Memory Design Engineer Pathfinding Folsom California United States Of America

As a Principal Memory Design Engineer on the Pathfinding team at Micron Technology, you will define and analyze mixed-signal circuits for next-generation memory technologies including DRAM and emerging memory types. The role requires developing novel concepts, performing circuit simulations, and optimizing floor planning while collaborating with physical design teams to ensure timing closure and power alignment. You will provide technical direction for mixed-signal circuits tightly coupled with the memory core to enable groundbreaking memory solutions.