Northrop Grumman
Northrop Grumman seeks a Microelectronics Semiconductor Engineer to research, develop, and manufacture III-V compound semiconductors using molecular-beam epitaxy (MBE) in their Manhattan Beach facility. The role involves optimizing GaN, InP, and GaAs-based materials, operating advanced vacuum systems, and collaborating with process engineering to improve production quality and efficiency. Candidates will translate experimental work into repeatable processes while supporting the development of next-generation microelectronic devices for defense and commercial applications.
Headquarters
Falls Church, Virginia, United States
Company Size
10001+ employees
Founded
1939
Northrop Grumman is a global aerospace and defense company that designs, builds, and integrates advanced systems, products, and services for national security, civil space, and commercial customers. With roughly 95,000 employees, it focuses on space systems and satellites, military and unmanned aircraft, advanced electronics, hypersonics, advanced manufacturing, and cyber and digital transformation. The company partners with government agencies — including NASA and the U.S. Department of Defense — to solve complex engineering challenges and deliver end-to-end solutions. Northrop Grumman is known for large-scale systems engineering, technology innovation, and program execution.
Headquarters
San Francisco, CA
Company Size
201-500 employees
Founded
2018
Industry
Technology
Glassdoor Rating
4.2 / 5
Sarah Johnson
Chief Executive Officer
Michael Chen
Chief Technology Officer
Emily Williams
VP of Engineering
David Rodriguez
VP of Product
Jessica Thompson
Chief Financial Officer
Andrew Park
VP of Sales
View leadership team, funding history,
and employee contacts for Northrop Grumman.
20% above the average for this role
Bringing Our People Home
6 days ago
Postdoctoral Scholar
Texas State University
MBE Engineer
Applied Optoelectronics, Inc.
Thin Films, Intern
Macomtech Oy
Postdoctoral Scholar
Texas State University
Postdoctoral Researcher in the Growth and Characterisation of III-N Lasers (Rinn Semiconductor – Ireland’s Centre for Semiconductor Innovation – HET Theme (Heterogeneous Integration) – III-Nitride Laser Materials and Devices)
Tyndall National Institute
InP (Indium Phosphide) Talent – Engineers and Technicians
Oracle