Technology Development Intern, RF GaN (Summer 2026)

GlobalFoundries(5 months ago)

United States, Essex Junction, VermontOnsiteFull TimeIntern$40,000 - $80,000Technology Development

About this role

GlobalFoundries is hiring a graduate-level intern to join its Technology Development team supporting the FAB9 200mm facility in Vermont. The internship focuses on advancing RF GaN semiconductor technologies and new device/process flows for emerging market applications. Interns will be embedded with engineering project teams working on GaN HEMT technology development and characterization.

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Required Skills

Semiconductor Processing
Device Physics
GaN HEMT
Device Characterization
RF Testing
S-Parameters
Load-Pull Testing
Pulsed I-V
Process Integration
Experiment Design

+6 more

Qualifications

MS in Electrical Engineering
PhD in Electrical Engineering
MS in Solid State Physics
PhD in Solid State Physics

About GlobalFoundries

gf.com

GlobalFoundries is a leading semiconductor manufacturing firm that specializes in providing advanced technology solutions to a global clientele. The company facilitates seamless collaboration through its GF Connect platform, allowing customers to manage orders and get to production more efficiently. With a commitment to innovation and quality, GlobalFoundries plays a crucial role in the semiconductor supply chain, delivering cutting-edge manufacturing capabilities for various industries.

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