Northrop Grumman
A Principal or Senior Principal Microelectronics Device Engineer at Northrop Grumman drives the research, development, and maturation of novel III-V semiconductor technologies, including advanced GaN HEMT nodes, at the Redondo Beach Foundry. The role involves leading experimental device development, mmW transistor design, and characterization while collaborating with process, circuit, and test engineers to transition technologies from R&D into production. Candidates will apply deep expertise in semiconductor device physics and Design-of-Experiments methodologies to support ground, avionic, and space systems.
Headquarters
Falls Church, Virginia, United States
Company Size
10001+ employees
Founded
1939
Northrop Grumman is a global aerospace and defense company that designs, builds, and integrates advanced systems, products, and services for national security, civil space, and commercial customers. With roughly 95,000 employees, it focuses on space systems and satellites, military and unmanned aircraft, advanced electronics, hypersonics, advanced manufacturing, and cyber and digital transformation. The company partners with government agencies — including NASA and the U.S. Department of Defense — to solve complex engineering challenges and deliver end-to-end solutions. Northrop Grumman is known for large-scale systems engineering, technology innovation, and program execution.
Headquarters
San Francisco, CA
Company Size
201-500 employees
Founded
2018
Industry
Technology
Glassdoor Rating
4.2 / 5
Sarah Johnson
Chief Executive Officer
Michael Chen
Chief Technology Officer
Emily Williams
VP of Engineering
David Rodriguez
VP of Product
Jessica Thompson
Chief Financial Officer
Andrew Park
VP of Sales
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5% above the average for this role
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